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Point Defect Assisted Crystal Growth of Bulk ZnSe

Published online by Cambridge University Press:  03 September 2012

K. Terashima ,
E. Toklzaki ,
H. Kondo ,
S. Tanigawa ,
A. Uedono ,
S. Watauchi  and
Y. Ujihira
K. Terashima
Affiliation:
KIMURA Metamelt Project ERATO, JRDC, Tsukuba Research Consortium, 5–9–9 Tokodai Tsukuba, Ibaraki 300–26, Japan
E. Toklzaki
Affiliation:
KIMURA Metamelt Project ERATO, JRDC, Tsukuba Research Consortium, 5–9–9 Tokodai Tsukuba, Ibaraki 300–26, Japan
H. Kondo
Affiliation:
Institute of Materials Science, University of Tsukuba., Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba., Tsukuba, Ibaraki 305, Japan
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo., 7–3–1 Hongo, Tokyo 113, Japan
S. Watauchi
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo., 7–3–1 Hongo, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo., 7–3–1 Hongo, Tokyo 113, Japan
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Abstract

Bulk ZnSe single crystals were grown by annealing a CVD grown polycrystalline ingot in a selenium atmosphere for two weeks at 1000°C. To identify the defect structures closely related to the observed grain growth, point defects in bulk ZnSe were subsequently investigated using the positron annihilation technique. A striking result has been obtained; the selenium interstitial type defects were dominantly observed in the crystals grown under a selenium ambient. The fraction of annihilations from the trap states at selenium interstitial type defects in ZnSe increased with increasing the selenium pressure in the annealing ampoule. These results indicated that selenium interstitial type defects enhanced the atomic migration in the crystal and strongly assisted the recrystallization by dislocation climb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 111
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Nishizawa, J., Ito, K., Okubo, Y. and Sakurai, F., J. Appl. Phy. 57 2210 (1985)Google Scholar
[2] Sirakawa, Y. and Kukimolo, H., J. Appl. Phys. 51. 2014 (1981)Google Scholar
[3] Kikuma, I. and Furukoshi, M., Jpn. J. Appl. Phys. 24 L941 (1985)Google Scholar
[4] Fisher, A. G. and Pruss, V. T., ACCG Conf., Gaithersburg, M. A. 1969 Google Scholar
[5] Fujita, S., Mimoto, H., Takebe, H. and Noguchi, T., J. Crystal Growth 47 326 (1979)Google Scholar
[6] Terashima, K. and Takena, M., J. Crystal Growth 110 623 (1991)Google Scholar
[7] Terashima, K., Kawachi, M. and Takena, M., J. Crystal Growth 102 479 (1990)Google Scholar
[8] Terashima, K., Kawachi, M. and takena, M., J. Crystal Growth 104 467 (1990)Google Scholar
[9] Terashima, K., Kawachi, M. and Takena, M., Defect Control in Semiconductors Sumino, K. (ed) p 955 Elsevier Science Publishers B. V. 1990 Google Scholar
[10] Dannefaer, S., J. Phys. C; Solid State Phys. 15 599 (1982)CrossRefGoogle Scholar
[11] Dlubek, G., Dlubek, A., Krause, R., Brummer, O., Friedland, K. and Rentzscii, R., Phys. Stat. Sol. (a) 106. 419 (1988)Google Scholar
[12] Puska, M. J., J. Phys.; Condens. Matter, 3 3455 (1991)Google Scholar
[13] Dannefaer, S. and Kerr, D., J. Appl. Phys. 60 1313 (1986)Google Scholar
[14] Burgers, W. G., The Art and Science of Growing Crystals (John Wiley, NY 1966) p 416 Google Scholar