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P-N Junction Formation in Electron-beam Irradiated Graphene Step

Published online by Cambridge University Press:  18 April 2012

Xiaomu Wang ,
Chengliang Wang  and
Jian-Bin Xu
Xiaomu Wang
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
Chengliang Wang
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
Jian-Bin Xu
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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Abstract

We show that graphene mono-/bilayer step operates as an abrupt p-n (p-p+) junction. Due to the thickness-dependent oxidation effect, the uniform channel can be adjusted to spatially asymmetrical junction by means of electron beam irradiation. The lithography-free process on OTMS modified substrate possesses the merit of clean surface and high performance. This conveniently fabricated graphene step device opens an opportunity to study the intrinsic interface across a well defined junction.

Keywords

electron irradiationelectronic structureoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-35
Copyright
Copyright © Materials Research Society 2012

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References

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