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P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

  • Y. L. Huang (a1), E. Simoen (a2), R. Job (a1), C. Claeys (a2) (a3), W. Düngen (a1), Y. Ma (a1), W. R. Fahrner (a1), J. Versluys (a4) and P. Clauws (a4)...

Abstract

A rather large amount of shallow donors is created in p-type Czochralski silicon (Cz Si) wafers after a hydrogen plasma exposure at ∼270 °C (substrate temperature) and a subsequent annealing in the temperature range of 350-450 °C. This two-step process has been used for the fabrication p-n junction diodes at low temperatures. Current-voltage characteristics show that the breakdown voltages of these diodes are higher than 100 V. The diode leakage is found to be improved after slow ramp annealing at temperatures up to 250 °C. Deep level transient spectroscopy measurements reveal that the oxygen related thermal donor is not the dominant doping species as expected before.

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P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

  • Y. L. Huang (a1), E. Simoen (a2), R. Job (a1), C. Claeys (a2) (a3), W. Düngen (a1), Y. Ma (a1), W. R. Fahrner (a1), J. Versluys (a4) and P. Clauws (a4)...

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