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Pld Epitaxial Tin Contacts To 6H-Sic And Gan

  • V. Talyansky (a1), R. D. Vispute (a1), S. N. Andronescu (a2), A. A. Iliadis (a2), K. A. Jones (a3), S. Choopun (a1), M. J. Dowries (a1), R. P. Sharma (a1), T. Venkatesan (a1), Y. X. Li (a4), L. G Salamanca-Riba (a4), M. C. Wood (a3) and R. A. Lareau (a3)...

Abstract

We have investigated the influence of TiN growth temperature on the contact resistance in TiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600°C formed low resistance contacts to n-type 6H-SiC and GaN of 1.1× 10−3 Ωcm2 and 7.9 ×10−5 Ωcm2, respectively. Structural and electrical characterization of TiN thin films is discussed.

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