Skip to main content Accessibility help

Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)

  • S. Sinharoy (a1), A. K. Agarwal (a1), G. Augustine (a1), L. B. Rowland (a1), R. L. Messham (a1), M. C. Driver (a1) and R. H. Hopkins (a1)...


The growth of undoped and doped GaN and AlGaN films on off-axis 6H SiC substrates was investigated using plasma-assisted molecular beam epitaxy (MBE). Smooth and crack-free GaN and AlGaN films were obtained; the best results occurred at the highest growth temperature studied (800°C) and with a 40 to 50 nm A1N buffer layer grown at the same temperature. Carrier concentrations of up to n = 4 × 1020 cm−3 were accomplished with silicon, with a 40 to 50% activation rate as determined by secondary ion mass spectrometry (SIMS). Unintentionally doped AlxGa,.xN (x≈0.1) was n-type with a carrier concentration of 7 × 1018 cm−3. N-type AlGaN (x≈0.1)/p-type 6H SiC (0001) heterostructures showed excellent junction characteristics with leakage currents of less than 0.1 nA at 5 V reverse bias at room temperature and 0.5 nA at 200°C operating temperature.



Hide All
1 Nakamura, S., Mukai, T., and Senoh, M., J. Appl. Phys. 76, 8189 (1994).
2 Molnar, R. J., Singh, R., and Moustakas, T. D., Appl. Phys. Lett. 66, 268 (1995).
3 Johnson, M. A. L., Fujita, S., Rowland, W. H. Jr., Bowers, K. A., Hughes, W. C., He, Y. W., El Masry, N. A., Cook, J. W. Jr., Schetzina, J. F., Ren, J., and Edmond, J. A., to be published in J. Vac. Sci. Technol. B.
4 van Hove, J. M., Carpenter, G., Nelson, E., Wowchak, A., and Chow, P. P., to be published in J. Vac. Sci. Technol. B.
5 Khan, M. A., Kuznia, J. N., Bhattarai, A. R., and Olson, D. T., Appl. Phys. Lett. 62, 1786 (1993).
6 Binari, S. C., Rowland, L. B., Kruppa, W., Kelner, G., Doverspike, K., and Gaskill, D. K., Electronics Lett. 30, 1248 (1994).
7 Khan, M. A., Shur, M. S., Kuznia, J. N., Chen, Q., Burm, J., and Schaff, W., Appl. Phys. Lett. 66, 1083 (1995).
8 Özgür, A., Kim, W., Fan, Z., Botchkarev, A., Salvador, A., Mohammad, S. N., Sverdlov, B., and Morkoç, H., Electronics Lett. 31, 1389 (1995).
9 Pankove, J., Chang, S. S., Lee, H. C., Molnar, R. J., Moustakas, T. D., and Van Zeghbroeck, B., IEDM-94, 389 (1994).
10 Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).
11 Hughes, W. C., Rowland, W. H. Jr., Johnson, M. A. L., Fujita, S., Cook, J. W. Jr., and Schetzina, J. F., J. Vac. Sci. Technol. B 13, 1571 (1995).
12 Brandt, C. D., Agarwal, A. K., Augustine, G., Burk, A. A., Clarke, R. C., Glass, R. C., Hobgood, H. M., McHugh, J. P., McMullin, P. G., Siergiej, R. R., Smith, T. J., Sriram, S., Driver, M. C., and Hopkins, R. H., “Compound Semiconductors 1994”, Proc. 21st. Int. Symp. Compound Semiconductors, edited by Goronkin, H. and Mishra, U. (IOP Conf. Series v. 141, IOP Publishing, Bristol, 1995).
13 Sitar, Z., Paisley, M. J., Yan, B., Ruan, J., Choyke, W. J., and Davis, R. F., J. Vac. Sci. Technol. B 8 (2), 316 (1990).
14 Sinharoy, S., Augustine, G., Rowland, L. B., Agarwal, A. K., Messham, R. L., Driver, M. C., and Hopkins, R. H., J. Vac. Sci. Technol. A (in press).
15 Lin, M. E., Sverdlov, B., Zhou, G. L., and Morkoç, H., Appl. Phys. Lett. 62, 3479 (1993).
16 Smith, D. J., Chandrasekhar, D., Sverdlov, B., Botchkarev, A., Salvador, A., and Morkoç, H., Appl. Phys. Lett. 67, 1830 (1995).
17 Weeks, T. W. Jr., Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G., and Davis, R. F., Appl. Phys. Lett., 67, 401 (1995).
18 Koide, N., Kato, H., Sassa, M., Yamasaki, S., Manabe, K., Hashimoto, H., Amano, H., Hiramatsu, K., and Akasaki, I., J. Cryst. Growth 115, 639 (1991).
19 Nakamura, S., Mukai, T., and Senoh, M., J. Appl. Phys. 31, 2883 (1992).
20 Wickenden, D. K. and Bryden, W. A., in Silicon Carbide and Related Materials, edited by Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. A., Kaplan, R., and Rahman, M. (Institute of Physics, Bristol), p. 381 (1994).
21 Rowland, L. B., Doverspike, K., and Gaskill, D. K., Appl. Phys. Lett. 66, 1495 (1995).
22 Wickenden, A. E., Rowland, L. B., Doverspike, K., Gaskill, D. K., Freitas, J. A. Jr., Simons, D. S., and Chi, P. H., J. Electron. Mater. 25, 1547 (1995).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed