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Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100)

Published online by Cambridge University Press:  21 February 2011

T. P. Schneider ,
J. Cho ,
Y.Y. Chen ,
D.D. Maher  and
R.R. Nemanich
T. P. Schneider
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
J. Cho
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
Y.Y. Chen
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
D.D. Maher
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
R.R. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, N.C. 27695-8202
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Abstract

Low temperature (50-400°C) and low pressure (10-300 mTorr) processing conditions for remote H-plasma cleaning of Si(100) substrates were investigated. After plasma exposure, ordered surfaces were obtained which displayed 2×1, 3×l and lxI LEED diffraction patterns. The surface phases following the H-plasma clean were dependent on temperature and pressure. The electronic states of the surfaces were explored with angle resolved uv-photoemission spectroscopy (ARUPS) and states due to Si-H bonding were identified. The atomic interactions at the surface were modeled in terms of several processes including Eley-Rideal abstraction, thermally activated desorption and a physisorbed weakly bound state. The kinetic model was able to describe the transitions observed in the processing results. Suitability of the cleaning process for low temperature epitaxy was demonstrated by low temperature MBE epi-growth on an H-terminated 2×1 surface. The initial oxide formation on the H-terminated surfaces were studied by ARUPS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 197
Copyright
Copyright © Materials Research Society 1993

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References

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