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Plasma Modification Of Si-O-Si Bond Structure in Porous Sioch Films

Published online by Cambridge University Press:  01 February 2011

Fedor N Dultsev ,
Adam M Urbanowicz  and
Mikhail R Baklanov
Fedor N Dultsev
Affiliation:
baklanov@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, B-3001, Belgium, +32 16 281 606, +32 16 281 214
Adam M Urbanowicz
Affiliation:
urbano@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Mikhail R Baklanov
Affiliation:
baklanov@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

Plasma modification of SiOCH low-k films is analyzed by means of Molecular Mechanics. It is shown that the most probable mechanism of SiOCH modification in He plasma is removal of hydrogen atoms from CH3 groups. The change of Si–O–Si bond angles depends on the amount of the formed –CH2* (CHx) groups. During the followed exposure in NH3 plasma, NH2* radicals bind CHx groups with Si forming a –CH2– Si–O–Si–O–Si–O–Si– chain. The end of this chain gets bound to its beginning through NH2. This process is the reason of pore sealing.

Keywords

dielectricplasma depositioninfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N07-03
Copyright
Copyright © Materials Research Society 2008

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References

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