Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T18:29:02.564Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma Doping and Plasma-Less Doping of Semiconductor

Published online by Cambridge University Press:  03 September 2012

Bunji Mizuno ,
Michihiko Takase ,
Ichiro Nakayama  and
Mototsugu Ogura
Bunji Mizuno
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Michihiko Takase
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Ichiro Nakayama
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Mototsugu Ogura
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co.Ltd, mizuno@ spao.src.mei.co.jp
Get access

Abstract

New doping processes which can alternate the ion implantation to achieve the ultra shallow junction are reviewed. Mainly two ways have been proposed. One uses plasma and the other uses vapor phase reaction. 0.17μm Surface Channel (SC) - PMOSFET's have been successfully fabricated by especially plasma doping method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 345
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Mizuno, B. and Nakayama, I. et al., Appl. Phys. Lett. 53, 2059 (1988), Ext. Abs. SSDM, 317 (1987).Google Scholar
[2] Powell, R. and Felch., S., Tech. Proc SEMI Tech. Symp. Tokyo, pp.71–78, (1994).Google Scholar
[3] Jones, E. C. et al., Electron. Dev. Lett., 14, 444 (1993).Google Scholar
[4] Kiyota, Y. et al., Dig. of Symp. on VLSI Tech., 97 (1993).Google Scholar
[5] Mizuno, B. et al., Dig. of Symp. on VLSI Tech., 66 (1996).Google Scholar
[6] Mizuno, B. et al., Ext. Abs. SSDM, 1041 (1995).Google Scholar
[7] Hori, A. and Mizuno, B. et al., Tech. Dig. of IEDM, 485 (1994).Google Scholar
[8] Cheung, N.W. et al., Ext. Abs. SSDM, 351 (1995).Google Scholar
[9] Starck, H., J. Appl. Phys.,34, 2405 (1963).Google Scholar
[10] Seki, K. et al. Semiconductor World, 6, 90 (1987).Google Scholar
[11] Yoshida, A. et al., Apll. Phys. Lett., 53, 1741 (1987).Google Scholar
[12] Qin, X.Y. and Cheung, N.W., Nucl. Instr. Meth. Phys. Res. B55, 821 (1991).Google Scholar
[13] Felch, S. et al., Nucl. Instr. Meth. Phys. Res. B74, 687 (1993).Google Scholar
[14] Matyi, et al., at 3rd Int. Workshop on plasma based ion implantation (Dresden, 1996).Google Scholar