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Plasma Diagnostics and Modeling of TI/TIN Reactive Sputtering

Published online by Cambridge University Press:  25 February 2011

W. Tsai ,
J. Fair ,
D. Hoddl  and
Edward L. Ginzton
W. Tsai
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
J. Fair
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
D. Hoddl
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
Edward L. Ginzton
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
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Abstract

In situ optical emission spectroscopy studies of Ti/TiN reactive sputtering were carried out in a Varian M2000 cluster tool. Deposition rates of Ti/TiN films at 4.3 mTorr are directly proportional to ratio of Ti(365)/Ar(435) emission lines. Measurement of the ratio of the N(655)/Ar(435) emission lines indicates an incubative dependence on.nitrogen flow due to nitridation of the target. TiN reactive sputtering is accurately described by a mathematical model based on the nitrogen flux balance on target and wall/shield at steady state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 793
Copyright
Copyright © Materials Research Society 1992

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References

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