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The Plasma Deposition of Semiconductor Multilater Structures

Published online by Cambridge University Press:  21 February 2011

Masataka Hirose  and
Seiichi Miyazaki
Masataka Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Seiichi Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

The early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 199
Copyright
Copyright © Materials Research Society 1990

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References

1. Matsuda, A. and Tanaka, K., J. Appl. Phys. 60, 2351 (1986).Google Scholar
2. Itabashi, N. Kato, K., Nishiwaki, N., Goto, T., Yamada, C. and Hirota, E., Jpn. J. Appl. Phys. 27, L1565 (1988).Google Scholar
3. Gallagher, A. and Scott, J., Annual report to SERI for contacts Nos. XB-2–02085-1 and DB-2–02189-1, Solar Energy Research Institute, Golden, Colorado (1983).Google Scholar
4. Longway, P. A. and Lampe, F. W., J. Phys. Chem. 87, 354 (1983).Google Scholar
5. Veprek, S. (private communication).Google Scholar
6. Imbihl, R., Demuth, J. E., Gates, S. M. and Scott, B. A., Phys. Rev. B 39, 5222 (1989).Google Scholar
7. Tanaka, T., Fukuda, T., Nagasawa, Y., Miyazaki, S. and Hirose, M., Extended Abstracts of the 21st Conf. on Solid State Devices and Materials, Tokyo, p. 53 (1989).Google Scholar
8. Collins, R. W. and Cavase, J. M., J. Non-Cryst. Solids 97 & 98, 269 (1987).Google Scholar
9. Wadayama, T., Suetaka, W. and Sekiguchi, A., Jpn. J. Appl. Phys. 27, 501 (1988).Google Scholar
10. Collins, W. (private communication).Google Scholar
11. Knihts, C., J. Non-Cryst. Solids 35 & 36, 159 (1980).Google Scholar
12. Hirose, M., Murayama, N., Miyazaki, S. and Ihara, Y., Proc. of Material Research Society Symp. 70, Palo Alto, pp.405–414 (1986).Google Scholar
13. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).Google Scholar
14. Kakalios, J., Fritzche, H., Ibaraki, N. and Ovshinsky, S. R., J. Non-Cryst. Solids 66, 339 (1984).Google Scholar
15. Miyazaki, S., Murayama, N., Hirose, M. and Yamanishi, M., Technical Digest of the 1st Intern. Photovoltaic Science and Engineering Conf. Kobe, p. 425 (1984).Google Scholar
16. Abeles, B., Tiedje, T., Liang, K. S., Deckman, H. W., Stasiewsky, H. C., Scanlon, J. C. and Eisenberger, P. M., J. Non-Cryst. Solids 66, 351 (1984).Google Scholar
17. Hirose, M. and Miyazaki, S., J. Non-Cryst. Solids 97 & 98, 23 (1987).Google Scholar
18. Itoh, H., Matsubara, S., Muramatsu, S., Nakamura, N. and Shimada, T., Technical Digest of the 3rd Intern. Photovoltaic Science and Engineering Conf. Tokyo, p. 37 (1987).Google Scholar
19. Hazama, Y., Yamada, K., Miyazaki, S. and Hirose, M., J. Non-Cryst. Solids (1989) (to be published).Google Scholar
20. Parratt, L. G., Phys. Rev. 95, 359 (1954).Google Scholar
21. Hayashi, T., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys. 27, L314 (1988).Google Scholar
22. Miyazaki, S., Ihara, Y. and Hirose, M., Extended Abstracts of the 6th Int. Conf. on Solid State Devices and Materials, Tokyo, p. 675 (1986).Google Scholar
23. Tarui, H., Matsuyama, M., Tsuda, S., Hishikawa, Y., Takahama, T., Nakayama, S., Nakamura, N., Fukatsu, T., Nakano, S., Ohnishi, M. and Kuwano, Y., Extended Abstracts of the 6th Intern. Conf. on Solid State Devices and Materials, Tokyo, p. 687 (1986).Google Scholar
24. Miyazaki, S., Murayama, N. and Hirose, M., J. Non-Cryst. Solids 77 & 78, 1089 (1985).Google Scholar
25. Tsukude, M., Hata, S., Kohda, Y., Miyazaki, S. and Hirose, M., J. Non-Cryst. Solids 97 & 98, 317 (1987).Google Scholar