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Plasma Chemistry Study of Plasma Ion Implantation Doping for Cmos Devices

  • Shu Qin (a1), Yuanzhong Zhou (a1) and Chung Chan (a1)

Abstract

Plasma ion implantation (PII) doping processes utilizing PH3/He and B2H6/He plasmas to fabricate CMOS devices are presented. The impact of plasma chemistry of PH on device structure and characteristics are studied. By using an optimized process condition, low contamination levels and good device characteristics have been achieved.

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1. Under development by Novapure Corp. and Matheson Electronic Gas Products.
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