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Planarization with Cyclotene™ 3022 (BCB) Polymer Coatings

Published online by Cambridge University Press:  15 February 2011

T.M. Stokich Jr. ,
C.C. Fulks ,
M.T. Bernius ,
D.C. Burdeaux ,
P.E. Garrou  and
R.H. Heistand
T.M. Stokich Jr.
Affiliation:
The Dow Chemical Company, Central Research, Midland, MI
C.C. Fulks
Affiliation:
The Dow Chemical Company, Central Research, Midland, MI
M.T. Bernius
Affiliation:
The Dow Chemical Company, Central Research, Midland, MI
D.C. Burdeaux
Affiliation:
The Dow Chemical Company, Central Research, Midland, MI
P.E. Garrou
Affiliation:
The Dow Chemical Company, Central Research, Charlotte, NC
R.H. Heistand
Affiliation:
The Dow Chemical Company, Chemicals and Performance Products, Midland, MI
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Abstract

This work examines the planarization of polymer thin film coatings derived from Cyclotene™ 3022 prepolymer resins. Cyclotene™ 3022 is a divinyl siloxane bis-benzocyclobutene prepolymer (DVS-BCB, CAS 117732-87-3). It is used primarily as a dielectric in microelectronics applications.

Using profilometry, planarization measurements have been made on thin films spun over features consisting of lines and trenches. Feature widths have been varied from 2 to 1000 μm and the feature depths and film thickness have been varied from 1 to 16 μm. Effects of the processing procedure, resin concentration and resin additives have been explored. Local (versus global) planarization will be discussed.

Planarization has been found to depend on all feature dimensions and the polymer film thickness. Lines or other structures having a width of 100 μm or less can be planarized to 90% or better with standard commercial formulations of Cyclotene™ 3022, provided that the mean film thickness is twice the line-height or feature-depth. Metals such as Al, Cu, Cr and Ti can all be planarized to this degree; however, surface preparations may influence the result.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 517
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Skidmore, K, "Techniques for Planarizing Device Topography", Semiconductor International, 1988(4), 114.Google Scholar
2 Singer, P, "Searching for Perfect Planarity", Semiconductor International, 1992(3), 44.Google Scholar
3 Tummala, R and Rymaszewski, E editors, Microelectronic Packaging Handbook, Van Nostrand Reinhold, 1989.CrossRefGoogle Scholar
4 Garrou, PE, "Polymer Dielectrics for Multichip Module Processing", Proc. IEEEE, 80, 1992, 1942.Google Scholar
5 Perettie, D, Burdeaux, DC, McCulloch, MF and Garrou, PE, Proc. SPIE, San Jose, 1992, 1665.Google Scholar
6 Rothman, LB, "Properties of Thin Polyimide Films", J. Electrochem Soc. - Solid State Science and Technology, 1980, 2216.Google Scholar
7 Day, DR, Ridley, D, Mario, J and Senturia, SD, "Polyimide Planarization in Integrated Circuits", Polyimides, Mittel, KL editor, Plenum Press, 1984, 767.Google Scholar
8 Chao, C and Wang, WV, "Planarization Enhancement of Pi's by Dynamic Curing and the Effect of Multiple Coating", Polyimides, Mittel, KL editor, Plenum Press, 1984, 783.Google Scholar
9 Wilson, AM, "Use of Polyimides in VLSI Fabrication", Polyimides, Mittel, KL editor, Plenum Press, 1984.Google Scholar
10 Weber, WD and Gupta, MR, "Molecular Weight/Property Relationships in a Series of Polyimide Copolymers", Recent Advances in Polyimide Science and Technology, Weber, WD and Gupta, MR editors, Soc. Plastics Eng., 1987, 214.Google Scholar
11 Burdeaux, DC, Townsend, PH, Carr, JN and Garrou, PE, J Electronic Materials, 19, 1990, 1357.CrossRefGoogle Scholar
12 Fong, S, Keister, FZ and Peters, JW, Proc. 22nd SAMPE, 1990, 602.Google Scholar
13 Sherrima, FA, Sadaat, IA, SSikigahama, , Abado, AA, O'Brien, J and Thomas, M, Proc. ISHM, San Francisco, 1992, 596.Google Scholar
14 Shimoto, T, Matsui, K, Kimura, M and Utsumi, K, Proc. 7th Int. Microelectronics Conf., Yokohama, 1992, 325.Google Scholar
15 Tessier, TG, Proc. 6th Int. SAMPE Electronics Conf., Baltimore, 1992, 347.Google Scholar
16 Kirchhoff, RA, U.S. 4,540,763 (Sept 10, 1985).CrossRefGoogle Scholar
17 Heistand, RH, DeVellis, R, Manial, T, Stokich, TM, Townsend, PH, Garrou, PE, Takahashi, T, Adema, G, Berry, M and Turlik, I, Int. Microelectronics and Packaging, 15, 1992, 183.Google Scholar
18 Stokich, TM, Lee, WM and Peters, RA, Mat. Res. Soc. Proc., 227, 1991, 103–114.CrossRefGoogle Scholar
19 Dibbs, MG, Townsend, PH, Stokich, TM, Huber, BS, Mohler, CE, Heistand, RH, Garrou, PE, Adema, GM, Berry, MJ and Turlik, I, "Cure Management of Benzoyclobutene Dielectric for Electronic Applications", Proc. of the 6th Int. SAMPE Electronic Materials and Processes (June 23-25, 1992).Google Scholar
20 Garrou, PE, Heistand, RH, Dibbs, M, Manial, TA, Mohler, C, Stokich, T, Townsend, PH, Adema, GM, Berry, MJ anf Turlik, I, 42nd Electronics Components Tech. Conf. May 1992.Google Scholar