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Planarization Materials for Active Matrix Thin Film Transistor Arrays

Abstract

Traditional plasma based dielectric films are conformal and cost-prohibitive for large displays. Solution based dielectrics are planarizing in nature and provide a flat surface for indium tin oxide (ITO) layer with the resultant uniform liquid crystal response throughout the pixel. In this paper, we present the display-related material properties and integration results obtained by using a solution-based organosilsesquioxane material. The material exhibits extremely high transmittance and planarization, low outgassing, high resistance to moisture absorption and diffusion, good adhesion to other layers integrated with it and ease of integration.

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References

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1. Katayama, M., TFT-LCD Technology, Thin Solid Films, 341 (1999) 140147.10.1016/S0040-6090(98)01519-3
2. Matsumura, H., J. Appl. Phys., 66, 3612 (1989).10.1063/1.344068

Keywords

Planarization Materials for Active Matrix Thin Film Transistor Arrays

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