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PL and FTIR Absorption Study on Porous Silicon in Situ During Etching, in Oxygen Ambient, and After Chemical Oxidation

  • G. Mauckner (a1), T. Walter (a1), T. Baier (a1), K. Thonke (a1) and R. Sauer Abteilung (a1)...

Abstract

Steady state and time-resolved photoluminescence (PL) and Fourier-transform infrared (FTIR) spectroscopy have been performed in situ during etching, on “as prepared” porous Si in air under laser exposure and on chemically oxidized porous Si. We suppose that PLdegradation of “as prepared” porous Si is caused by creating non-radiative defect centers during photooxidation. Chemically oxidized porous Si shows increased PL intensity and longer recombination lifetimes as compared to non-oxidized samples. We conclude, that an oxide layer with low defect density on the inner surface of chemically oxidized porous Si reduces the non-radiative recombination rate.

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PL and FTIR Absorption Study on Porous Silicon in Situ During Etching, in Oxygen Ambient, and After Chemical Oxidation

  • G. Mauckner (a1), T. Walter (a1), T. Baier (a1), K. Thonke (a1) and R. Sauer Abteilung (a1)...

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