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Piezoresistivity of Polycrystalline Diamond Films

Published online by Cambridge University Press:  28 February 2011

Der-Rern Wur
Affiliation:
Department of Electrical Engineering, Vanderbilt University, Nashville, TN 37235
Jim L. Davidson
Affiliation:
Department of Electrical Engineering, Vanderbilt University, Nashville, TN 37235
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Abstract

Polycrystalline diamond film (PDF) is known for its high power, high temperature, and radiation hard potential. The interest in piezoresistivity of PDF is that it is a candidate for high temperature sensing (e.g., pressure sensor).

Piezoresistivity measurements were taken of boron-doped PDF grown by microwave-plasma chemical vapor deposition(CVD). Three substrates, silicon, aluminum nitride and tungsten were used. Films were detached from these substrates, then attached to a ceramic substrate. The piezoresistivity varies, dependent on the original host substrate. For example, at room temperature, the PDF film from tungsten has a greater gauge factor, around 75. The carrier activation energy of this film, determined from log R(l/T), was nominally 0.25eV.

Combining thick film technology and CVD processes, patterned B-doped PDF has been achieved monolithically on A1N substrates. The characteristics of this configuration is being investigated and will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCE

1. Boggs, R.N., Design News, 7075 (April 1989).Google Scholar
2. Graebner, J.E., et al. Nature, 359, 401403, (1992).Google Scholar
3. Ramesham, R., et al. Second International Conference on the New Diamond Science and Technology, Washington DC (1990).Google Scholar
4. Geis, M.W., Proceedings of the IEEE, 79 (5), 669676, (1991).Google Scholar
5. Aslam, M., Taher, I., Masood, A., Tamor, M.A., Potter, T.J., Appl. Phys. Lett. 60 (23), 29232925, (1992).Google Scholar
6. Edwards, Laura and Davidson, J. L., ISHM ‘92 Proceedings, (1992).Google Scholar
7. Frenklach, M., J. Appl. Phys., 65 (12), 51425149, (1989).Google Scholar
8. Edwards, Laura, PhD thesis, Vanderbilt University, (1992).Google Scholar
9. Mason, W.P., J. Aud. Engng. Soc., 17, 506511, (1969).Google Scholar
10. Blasquez, G., Pons, P. and Boukabache, A., Sensors and Acutators, 17, 387403, (1989).Google Scholar
11. Binder, I. J. et al., Sensors and Acutators, 4, 527536, (1983).Google Scholar