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Piezoelectric Properties of GaN Self-Organized Quantum Dots

Published online by Cambridge University Press:  15 February 2011

B. Daudin ,
F. Widmann ,
J. Simon ,
G. Feuillet ,
J. L. Rouvi&re ,
N. T. Pelekanos  and
G. Fishman
B. Daudin
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
F. Widmann
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
J. Simon
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
G. Feuillet
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
J. L. Rouvi&re
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
N. T. Pelekanos
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, daudin@drfmc.ceng.cea.fr
G. Fishman
Affiliation:
Laboratoire de Spectromtrie Physique, UMR C5588, Université J. Fourier-Grenoble 1- CNRS, BP 87, 38402 St. Martin d'Hères Cedex, France
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Abstract

It is demonstrated that GaN quantum dots with the wurtzite structure grown by molecular beam epitaxy on AIN exhibit optical properties which, depending on the size of the dots, may be dominated by piezoelectric effects. In “large” quantum dots with an average height and diameter of 4.1 and 17 nm, respectively, the photoluminescence peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap, which is assigned to a piezoelectric field of 5.5 MV/cm present in the dots. The decay time of the photoluminescence was also measured. A comparison is carried out with theoretical calculation of the radiative lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G9.2
Copyright
Copyright © Materials Research Society 1999

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References

[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., Chocho, K., Appl. Phys. Lett., 72, 211 (1998)Google Scholar
[2] Arakawa, Y., Sakaki, H., Appl. Phys. Lett. 40, 939 (1982)Google Scholar
[3] Bernardini, F., Fiorentini, V., Vanderbilt, D., Phys. Rev. Lett. 79, 3958 (1997)Google Scholar
[4] Bernardini, F., Fiorentini, V., Vanderbilt, D., Phys. Rev. B 56, R10024 (1997)Google Scholar
[5] Feuillet, G., Widmann, F., Daudin, B., Schuler, J., Arlery, M., Rouvière, J. L., Pelekanos, N., Briot, O., Mat. Sc. Engineering B 50, 233 (1997)Google Scholar
[6] Daudin, B., Widmann, F., Feuillet, G., Samson, Y., Arlery, M., Rouvière, J. L., Phys. Rev. B, 56, R7069 (1997)Google Scholar
[7] Widmann, F., Daudin, B., Feuillet, G., Samson, Y., Rouvière, J. L., Pelekanos, N. J. Appl. Phys., 83, 7618 (1998)Google Scholar
[8] Widmann, F., Simon, J., Daudin, B., Feuillet, G., Rouvikre, J. L., Pelekanos, N. T., Fishman, G., Phys Rev B, in pressGoogle Scholar
[9] Martin, G., Botchkarev, A., Rockett, A., Morkoq, H., Appl. Phys. Lett. 68, 2541 (1996)Google Scholar
[10] Im, Jin Seo, Kollmer, H., Off, J., Sohmer, A., Scholz, F., Hangleiter, A., Phys. Rev. B 57, R9435 (1998)Google Scholar
[11] Langer, R., Simon, J., Konovalov, O., Pelekanos, N.T., Barski, A., Leszczynski, M., MRS Internet Journal of Nitride Semiconductor Research, 3, 46 (1998).Google Scholar
[12] Dexter, D.L., in Solid State Physics, edited by Seitz, F. and Turnbull, D. (Academic, New York, 1958), Vol.6, p.353.Google Scholar
[13] 't Hooft, G.W., Poel, W.A.J.A. van der, Molenkamp, L.W., Foxon, C.T., Phys.Rev.B 35, 8281 (1987).Google Scholar
[14] Romestain, R., Fishman, G., Phys.Rev.B 49, 1774 (1994).Google Scholar