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Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

C. M. Lueng ,
H. L. W. Chan ,
W. K. Fong ,
C. Surya  and
C. L. Choy
C. M. Lueng
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong.
H. L. W. Chan
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong.
W. K. Fong
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong.
C. Surya
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong.
C. L. Choy
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Horn, Kowloon, Hong Kong.
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Abstract

Aluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 389
Copyright
Copyright © Materials Research Society 1999

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References

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