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Physics-Based Diffusion Simulations for Preamorphized Ultrashallow Junctions

Published online by Cambridge University Press:  01 February 2011

N.E.B. Cowern ,
B. Colombeau ,
E. Lampin ,
F. Cristiano ,
A. Claverie ,
Y. Lamrani ,
R. Duffy ,
V. Venezia ,
A. Heringa  and
C.C. Wang
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N.E.B. Cowern
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford GU2 7XH,UK
B. Colombeau
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford GU2 7XH,UK
E. Lampin
Affiliation:
IEMN/ISEN, UMR CNRS 8520, Villeneuve d'Ascq, France
F. Cristiano
Affiliation:
Ion Implantation Group, CEMES/LAAS-CNRS, Toulouse, France
A. Claverie
Affiliation:
Ion Implantation Group, CEMES/LAAS-CNRS, Toulouse, France
Y. Lamrani
Affiliation:
Ion Implantation Group, CEMES/LAAS-CNRS, Toulouse, France
R. Duffy
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, Belgium
V. Venezia
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, Belgium
A. Heringa
Affiliation:
Philips Research Leuven, Kapeldreef 75, B-3001 Leuven, Belgium
C.C. Wang
Affiliation:
Advanced Device Technology Department, R&D, Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan
C. Zechner
Affiliation:
ISE Integrated System Engineering AG, Balgriststrasse 102, CH-8008 Zürich, Switzerland
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Abstract

In recent years there have been major advances in our understanding of the energetics, Ostwald ripening and transformations between various types of extended self-interstitial defect in Si and Ge ion-implanted silicon. As a result we can now predict the detailed time- and temperature-dependent supersaturation of interstitials during thermal evolution of these defects. This opens the way to predictive simulation of transient enhanced diffusion and dose loss in preamorphized ultrashallow junctions, where dopant movement is driven by free interstitials emitted by self-interstitial “end-of-range” defects. We present recent progress on this topic, emphasizing novel effects in highly doped ultrashallow junctions. Two key influences – the chemical pump effect due to the high concentration of dopants in ultrashallow junctions, and the ‘long hop’ behaviour of the dopant – are discussed in detail. The paper concludes by presenting simulation results that explain the recent observation of ‘uphill diffusion’ of B ultrashallow junction profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.8
Copyright
Copyright © Materials Research Society 2003

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References

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