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Physical-Chemical Evolution upon Thermal Treatments of Al2O3, HfO2 and Al/Hf Composite Materials Deposited by ALCVD™

  • B. Crivelli (a1), M. Alessandri (a1), S. Alberici (a1), F. Cazzaniga (a1), D. Dekadjevi (a2), J. W. Maes (a3), G. Ottaviani (a4), G. Pavia (a1), G. Queirolo (a1), S. Santucci (a5) and F. Zanderigo (a1)...

Abstract

This paper presents a systematic investigation of thermal stability of high-k materials deposited on RCA cleaned wafers by ALCVD™ in an ASM Pulsar™ 2000 reactor. Physical-chemical evolution of Al2O3, HfO2 and Al/Hf composite materials (nanolaminate and aluminates) was studied considering two types of thermal treatments: quenched vacuum anneals from 300°C to 900°C and furnace atmospheric processes in N2 or O2 at 850°C and 900°C. Material crystallization and changes in film structure were studied by means of TEM, XRD, XRR, XRF, RBS and TOF-SIMS. Non-contact electrical measurements were used to detect modification in EOT and fixed charge. Al2O3 was found still amorphous at 900°C. Not so for HfO2 that crystallized in monoclinic phase at a temperature between 300–400°C. Crystallization temperature and possible phase separation of Al/Hf composite materials were found to be a function of Al2O3 content and film type. In most of these samples, however, a chemical evolution was detected in addition to the above reported crystallization phenomena. All the achieved results demonstrate that depending on thermal treatment conditions, ALCVD™ high-k stability does not only concern phase transition effects but also a transformation of the “SiO2/high-k” system into “doped-SiO2/silicate” stack.

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1. Copel, M., Cartier, E., Gusev, E.P., Guha, S., Bojarczuk, N., Poppeler, M., Appl. Phys. Lett. 78, 2670 (2001)
2. Busch, B.W., Schulte, W.H., Garfunkel, E., Gustafsson, T., Qi, W., Nieh, R., Lee, J., Phys. Rev. B 62, 290 (2000)
3. Crivelli, B., presented at the 4th Symposium on SiO2 and Advanced Dielectric, Trento, ITALY, 2002

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Physical-Chemical Evolution upon Thermal Treatments of Al2O3, HfO2 and Al/Hf Composite Materials Deposited by ALCVD™

  • B. Crivelli (a1), M. Alessandri (a1), S. Alberici (a1), F. Cazzaniga (a1), D. Dekadjevi (a2), J. W. Maes (a3), G. Ottaviani (a4), G. Pavia (a1), G. Queirolo (a1), S. Santucci (a5) and F. Zanderigo (a1)...

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