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Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

Published online by Cambridge University Press:  10 February 2011

J. C. Caylor ,
A. M. Stacy ,
T. Sands  and
R. Gronsky
J. C. Caylor
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
A. M. Stacy
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
T. Sands
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
R. Gronsky
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
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Abstract

Bulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 327
Copyright
Copyright © Materials Research Society 1999

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