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Physical Properties of Annealed a-CSiGe:H Alloys

  • F. Demichelis (a1), G. Kaniadakis (a1), C. F. Pirri (a1), A. Tagliaferro (a1) and E. Tresso (a1)...

Abstract

The optoelectronic properties of the new semiconducting alloy a-CSiGe:H have been studied with particular regard to the dependence upon deposition and annealing temperature. Infrared and electrical results are interpreted in terms of hydrogen bonding.

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1. Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E. and Rava, P. Proc. 3rd Int PVSEC, (Tokyo 1988) 313
2. Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E., Mea, G. Della and Paccagnella, A., Solid State Comm. (in press)
3. Demichelis, F., Kaniadakis, G., Tagliaferro, A. and Tresso, E., Appl. Opt. 26, 1737 (1987)
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6. Dischler, B., Sah, R.E., Koidl, P., Fluhr, W. and Vokann, A., Proc. 7-th Int. Symp. on Plasma Chemistry – Enidhoven, July 1985- Vol I - p.45
7. Demichelis, F., Kaniadakis, G., Mezzetti, E., Mpawenayo, P., Tagliaferro, A. Tresso, E., Rava, P. and Mea, G.A. Della, Il Nuovo Cimento 90, 393 (1987)
8. Huber, K.P., in AIP Handbook of Physics, ed. Gray, D.E. (Mc-raw-Hill, New York (1972), p. 7168
9. Beyer, W., Wagner, H. and Finger, F., J. of Non-Cryst. Solids 77&78, 857 (1985)
10. Demichelis, F., Tagliaferro, A., Proc. of 2nd Symposium on Physics and Application of Amorphous Semiconductors (Torino 1988) (In press)

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