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Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  21 February 2011

P. John ,
I.M. Odeh ,
A. Qayyum  and
J.I.B. Wilson
P. John
Affiliation:
Departments of Physics and Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
I.M. Odeh
Affiliation:
Departments of Physics and Chemistry, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
A. Qayyum
Affiliation:
Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
J.I.B. Wilson
Affiliation:
Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, Scotland
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Abstract

Hydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 181
Copyright
Copyright © Materials Research Society 1990

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References

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