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Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  03 August 2011

S. Emura
Affiliation:
ISIR, Osaka University, 8-1, Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
K. Higashi
Affiliation:
ISIR, Osaka University, 8-1, Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
A. Itadani
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima, Kita-ku, Okayama 700-8530, Japan
H. Torigoe
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima, Kita-ku, Okayama 700-8530, Japan
Y. Kuroda
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima, Kita-ku, Okayama 700-8530, Japan
A. Nishikawa
Affiliation:
Division of Materials and Manufacturing Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
Y. Fujiwara
Affiliation:
Division of Materials and Manufacturing Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
H. Asahi
Affiliation:
ISIR, Osaka University, 8-1, Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
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Abstract

X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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3. Other outer shells of each element, of coarse, are excited. However, the absorption coefficients for these orbital are very low at 7100 eV.Google Scholar