Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T15:25:27.291Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Studies of Impurities and Defects in Mercuric Iodide

Published online by Cambridge University Press:  25 February 2011

X.J. Bao ,
T.E. Schlesinger ,
R.B. James ,
A.Y. Cheng  and
C. Ortale
X.J. Bao
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213
T.E. Schlesinger
Affiliation:
Carnegie Mellon University, Department of Electrical and Computer Engineering, Pittsburgh, PA 15213
R.B. James
Affiliation:
Sandia National Laboratories, Advanced Materials Division, Livermore, CA 94450
A.Y. Cheng
Affiliation:
EG&G Energy Measurements, Inc., Goleta, CA 93116
C. Ortale
Affiliation:
EG&G Energy Measurements, Inc., Goleta, CA 93116
Get access

Abstract

We have studied the effects of chemical etching in potassium iodide(KI) aqueous solution, vacuum exposure and bulk heating on the photoluminescence(PL) spectra of mercuric i0dide(HgI2). Different contact materials deposited onto HgI2 were also investigated, such as Pd, Cu, Al, Ni, Sn, In, Ag and Ta. These processing steps and the choice of a suitable electrode material are very important in the manufacturing of high-quality mercuric iodide nuclear detectors. Comparisons are made between the front surface photoluminescence and transmission photoluminescence spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 1027
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Schieber, M., Nucl. Instr. Meth. 213, 1 (1983).Google Scholar
2 Holzer, A. and Schieber, M., IEEE Trans. Nucl. Sci. NS–27, 266 (1980).Google Scholar
3 James, R.B., Bao, X.J., Schlesinger, T.E., Markakis, J.M., Cheng, A.Y. and Ortale, C., J. Appl. Phys. 66, 2578 (1989).Google Scholar
4 Bao, X.J., Schlesinger, T.E., James, R.B., Stulen, R.H., Ortale, C., van den Berg, L., to be published.Google Scholar
5 Novikov, B.V. and Pimonenko, M.M., Sov. Phys. Semicond. 4, 1785 (1971).Google Scholar
6 Merz, J.L., Wu, Z.L., van den Berg, L. and Schnepple, W.F., Nucl. Instr. Meth. 213, 51 (1983).Google Scholar
7 Akopyan, I., Novikov, B., Permogorov, S., Selkin, A. and Travnikov, V., Phys. Stat. Sol. (b) 70, 353 (1975).Google Scholar