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Photoluminescence Stability Of Silicon Suboxide Thin Films

Published online by Cambridge University Press:  10 February 2011

F. Wang ,
B. J. Hinds ,
D. W. Wolfe  and
G. Lucovsky
F. Wang
Affiliation:
Department of Physics North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695
B. J. Hinds
Affiliation:
Department of Physics North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695
D. W. Wolfe
Affiliation:
Materials Science North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695 Materials Science North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695 Electrical and Computer Engineering North Carolina State University, P. 0. Box 8202, Raleigh, NC 27695
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Abstract

Photoluminescence (PL) stability of silicon suboxide (SiOx, 0<x<l.5) under light soaking and thermal processing has been investigated. As the oxygen content increases, the PL peak position shifts to the visible, with improved stability against measurement temperature and light soaking. With increasing annealing temperature, the PL spectra shifted to infrared, characteristic of a- Si:H. With annealing above 550 °C, visible PL is lost while infrared PL can be recovered by rehydrogenation of Si-dangling bond defects. Infrared absorption, transmission electron microscopy, visible absorption, and photocurrent indicate a disproportionation reaction resulting in a-Si phase segregation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 349
Copyright
Copyright © Materials Research Society 1998

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