Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-02T04:37:28.013Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides

Published online by Cambridge University Press:  28 February 2011

W.J. Choyke ,
J.L. Bradshaw ,
A. Mascarenhas ,
Z.C. Feng ,
S. Sinharoy  and
R.A. Hoffman
W.J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
J.L. Bradshaw
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
A. Mascarenhas
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
Z.C. Feng
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
S. Sinharoy
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
R.A. Hoffman
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235 ALCOA Technical Center, ALCOA Center, PA 15069
Get access

Abstract

Growth conditions are described for producing high quality crystalline films of CaF2 on (100) and (111) GaAs and LaF3, CeF3 and NdF3 on (111) Si. Rutherford backscattering/channeling, low temperature (<2K) photolumin-escence and Raman scattering are used as diagnostic techniques to probe the crystalline quality of the films and the stress/disorder induced at the film-substrate interface due to lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 355
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Asano, T., Kuriyama, Y. and Ishiwara, H., Electronics Letters 21, 386 (1985).CrossRefGoogle Scholar
2. Smith, T.P. III, Phillips, J.M., Augustyniak, W.M., and Stiles, P.J., Appl. Phys. Lett. 45, 907 (1984).CrossRefGoogle Scholar
3. Phillips, J.M., Mat. Res. Soc. Symp. Proc. 37, 143 (1985).Google Scholar
4. Sinharoy, S., Hoffman, R.A., Rieger, J.H., Takei, W.J. and Farrow, R.F.C., J. Vac. Sci. Technol. B3, 722 (1985).CrossRefGoogle Scholar
5. Farrow, R.F.C., Sinharoy, S., Hoffman, R.A., Rieger, J.H., Takei, W.J., Greggi, J.C. Jr., Wood, S., and Temofonte, T.A., Mat. Res. Soc. Symp. Proc. 37, 181 (1985).Google Scholar
6. Sinharoy, S., Hoffman, R.A., Farrow, R.F.C., and Rieger, J.H., J. Vac. Sci. Techno.. A3, 2323 (1985).CrossRefGoogle Scholar
7. Sinharoy, S., Hoffman, R.A., Rohatgi, A., Farrow, R.F.C. and Rieger, J.H., J. Appl. Phys. Jan. 1, 1986 (in press).Google Scholar
8. Sinharoy, S. and Hoffman, R.A., IEEE TRansaction on Electron Dev. ED–31, 1090 (1984).CrossRefGoogle Scholar
9. Sinharoy, S., Hoffman, R.A., Rieger, J.H., Farrow, R.F.C., and Noreika, A.J., J. Vac. Sci. Technol. A3, 842 (1985).CrossRefGoogle Scholar
10. Hoffman, R.A., Sinharoy, S., and Farrow, R.F.C., Appl. Phys. Lett. 47, 1068 (1985).CrossRefGoogle Scholar
11. Sheng, N.H., Mizuta, M., and Merz, J.L., Appl. Phys. Lett. 40, 68 (1982).CrossRefGoogle Scholar
12. Fathauer, R.W., and Schowalter, L.J., Appl. Phys. Lett. 45, 519 (1984).CrossRefGoogle Scholar
13. Schowalter, L.J., Fathauer, R.W., Goehner, R.P., Turner, L.G., and DeBlois, R.W., J. Appl. Phys. 58, 302 (1985).CrossRefGoogle Scholar
14. Ashen, D.J., Dean, P.J., Hurle, D.T., Mullin, J.B., White, A.M. and Green, P.D., J. Phys. Chem. Solids, 36, 1041 (1975).CrossRefGoogle Scholar
15. Stringfellow, G.B., Stall, R., Koschel, W., Appl. Phys. Lett. 38, 156 (1981).CrossRefGoogle Scholar