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Photoluminescence Properties Of δ-Doped ZnS:Mn Grown By Metal-Organic Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

W. Park ,
T. K. Tran ,
W. Tong ,
M. M. Kyi ,
S. Schön ,
B. K. Wagner  and
C. J. Summers
W. Park
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
T. K. Tran
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
W. Tong
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
M. M. Kyi
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
S. Schön
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
B. K. Wagner
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
C. J. Summers
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, GA 30332–0560, chris.summers@gtri.gatech.edu
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Abstract

A detailed study is reported of the optical properties of homogeneously and δ-doped ZnS:Mn thin films grown by metal-organic molecular beam epitaxy. Fine structure in the Mn luminescence was observed at low Mn concentrations. The energy of the zero-phonon 4T1→6A1, transition of the Mn ion was determined to be 2.215eV, and the phonon energies associated with the transition to be 10meV and 37meV for the TA and TO phonons, respectively. It was found that the PL intensity depended on the Mn concentration and the δ-doped ZnS:Mn showed much brighter luminescence than the homogeneously doped samples with comparable Mn concentrations. For homogeneously doped ZnS:Mn with low Mn concentrations, the temperature dependence of the linewidth and the peak position was well described by the configuration coordinate model. For δ-doped ZnS:Mn, the antiferromagnetic interaction between Mn ions was invoked to explain the low temperature behavior. The luminescence lifetime measurements suggested that the δ-doping technique resulted in better incorporation of Mn ions in the ZnS host and less defect formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 465
Copyright
Copyright © Materials Research Society 1997

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References

1. Tong, W., Shen, X., Wagner, B. K., Tran, T. K., Ogle, W., Park, W., Yang, T., and Summers, C. J., Proceeding of the SPIE, Vol.2408, 182 (1995)Google Scholar
2. Summers, C. J., Tong, W., Tran, T. K., Ogle, W., Park, W., and Wagner, B. K., Proceedings of the Seventh International Conference on II-VI compounds and Devices, to be published in J. Cryst. Growth (1996)Google Scholar
3. Abounadi, A., DiBlasio, M., Bouchara, D., Calas, J., Averous, M., Briot, O., Briot, N., Cloitre, T., Aulombard, R.L., and Gill, B., Phys. Rev. B 50, 11677 (1994)Google Scholar
4. Katiyar, M. and Kitai, A. H., J. Lumin. 46, 227 (1990)Google Scholar
5. Tran, T. K., Park, W., Tomm, J. W., Wagner, B. K., Summers, C. J., Yocom, P. N., and McClelland, S. K., J. Appl. Phys. 78, 5691 (1995)Google Scholar
6. Langer, D. and Ibuki, S., Phys. Rev. 138, A809 (1965)Google Scholar
7. Gebhardt, W. and Kuhnert, H., Phys. Lett. 11, 15 (1964)Google Scholar
8. Shionoya, S., Koda, T., Era, K., and Fujiwara, H., J. Phys. Soc. Japan 19, 1157 (1964)Google Scholar
9. Biernacki, S., Kutrowski, M., Karczewski, G., Wojtowicz, T., and Kossut, J., Semicond. Sci. Technol. 11, 48 (1996)Google Scholar
10. Biernacki, S. and Scheffler, M., Phys. Rev. Lett. 63, 290 (1989)Google Scholar
11. MacKay, J. F., Becker, W. M., Spalek, J., and Debska, U., Phys. Rev. B 42, 1743 (1990)Google Scholar
12. Brumage, W. H., Yarger, C. R., and Lin, C. C., Phys. Rev. 133, A765 (1964)Google Scholar
13. McClure, D. S., J. Chem. Phys. 39, 2850 (1963)Google Scholar
14. Moriwaki, M. M., Becker, W. M., Gebhardt, W., and Galazka, R. R., Phys. Rev. B 26, 3165 (1982)Google Scholar
15. Keil, T., Phys. Rev. 140, A601 (1965)Google Scholar
16. Huttl, B., Troppenz, U., Velthaus, K. O., Ronda, C. R., and Mauch, R. H., J. Appl. Phys. 78, 7282 (1995)Google Scholar
17. Benalloul, P., Benoit, J., Mach, R., Muller, G.O., and Reinsperger, G. U., J. Cryst. Growth 101, 989 (1990)Google Scholar
18. Pohl, U. W. and Gumlich, H. E., Phys. Rev. B 40, 1194 (1989)Google Scholar
19. Gumlich, H. E., J. Lumin. 23, 73 (1981)Google Scholar