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Photoluminescence of Sige Alloys Implanted with Erbium

Published online by Cambridge University Press:  22 February 2011

H.B. Erzgräber ,
P. Gaworzewski ,
K. Schmalz ,
D. Krôger ,
T. Morgenstern ,
A. Osinsky  and
M. Vatnik
H.B. Erzgräber
Affiliation:
Institute of Semiconductor Physics, 15230 Frankfurt (Oder), Germany
P. Gaworzewski
Affiliation:
Institute of Semiconductor Physics, 15230 Frankfurt (Oder), Germany
K. Schmalz
Affiliation:
Institute of Semiconductor Physics, 15230 Frankfurt (Oder), Germany
D. Krôger
Affiliation:
Institute of Semiconductor Physics, 15230 Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institute of Semiconductor Physics, 15230 Frankfurt (Oder), Germany
A. Osinsky
Affiliation:
Ioffe Physico-Technical Institute, 194021 Petersburg, Russia
M. Vatnik
Affiliation:
Ioffe Physico-Technical Institute, 194021 Petersburg, Russia
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Abstract

The 1.54μm emission of erbium implanted SiGe alloys was investigated as a function of oxygen and germanium concentrations as well as defect densities. Samples of SiGe layers grown by atmospheric pressure chemical vapor deposition technique which contain high concentrations of grown-in oxygen in the 10 19 - 1020 cm−3 range and 2 - 24 % Ge were chosen for the experiments. By using rapid thermal annealing in nitrogen atmosphere, a high optical activation of Er was found by photoluminescence. In samples with low defect densities nearly one third of the implanted Er ion dose could be detected in form of electrically active donors by spreading resistance measurements. The behavior of different SiGe : Er layers, based on sample property and annealing condition, suggests that more than only one type of luminescent Er-complex is present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 171
Copyright
Copyright © Materials Research Society 1994

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