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Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells

Published online by Cambridge University Press:  21 March 2011

B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P.P. Paskov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
G. Pozina
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
S. Kamiyama
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
M. Iwaya
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
H. Amano
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

In0.11Ga0.89N/In0.01Ga0.99N multiple quantum wells (MQWs) with heavily Si-doped barriers are shown to be very sensitive to a near surface depletion field. For a sample with 3 QWs, similar to what is often used in LEDs, only the QW most distant from the surface is observed in photoluminescence (PL). The appearance of a second lower energy PL peak below the ordinary QW exciton peak is a proof of a substantial band bending across the MQW structure. A similar effect seems to occur in pn-junctions having an MQW in the depletion region of a highly doped n-side. The strong depletion field is suggested to explain these results. The apparent absence of PL from the QWs closer to the surface (pn-junction) is tentatively ascribed to a loss of hole confinement in the strong depletion field.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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