Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-18T07:16:44.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells

Published online by Cambridge University Press:  21 March 2011

B. Monemar ,
P.P. Paskov ,
J.P. Bergman ,
G. Pozina ,
S. Kamiyama ,
M. Iwaya ,
H. Amano  and
I. Akasaki
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P.P. Paskov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
G. Pozina
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
S. Kamiyama
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
M. Iwaya
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
H. Amano
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical Engineering and Electronics and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
Get access

Abstract

In0.11Ga0.89N/In0.01Ga0.99N multiple quantum wells (MQWs) with heavily Si-doped barriers are shown to be very sensitive to a near surface depletion field. For a sample with 3 QWs, similar to what is often used in LEDs, only the QW most distant from the surface is observed in photoluminescence (PL). The appearance of a second lower energy PL peak below the ordinary QW exciton peak is a proof of a substantial band bending across the MQW structure. A similar effect seems to occur in pn-junctions having an MQW in the depletion region of a highly doped n-side. The strong depletion field is suggested to explain these results. The apparent absence of PL from the QWs closer to the surface (pn-junction) is tentatively ascribed to a loss of hole confinement in the strong depletion field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.8.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S. and Fasol, G., The Blue Laser Diode, (Springer, Berlin, 1997).10.1007/978-3-662-03462-0Google Scholar
2. Bernadini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).Google Scholar
3. Takeuchi, T., Takeuchi, H., Sota, S., Sakai, H., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 36 L177 (1997).10.1143/JJAP.36.L177Google Scholar
4. Monemar, B. and Pozina, G., Progress in Quantum Electronics 24, (2000) (2000).10.1016/S0079-6727(00)00009-4Google Scholar
5. Mayrock, O., Wunsche, H. J. and Henneberger, F., Phys. Rev. B 62, 16870 (2000)Google Scholar
6. Pozina, G., Bergman, J. P., Monemar, B., Iwaya, M., Nitta, S., Amano, H. and Akasaki, I.; Appl. Phys. Lett. 77, 1638 (2000).Google Scholar
7. Fiorentini, V., Bernadini, F., Sala, F. Della, Carlo, A. Di and Lugli, P., Phys. Rev. B 60, 8849 (1999).Google Scholar
8. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 35 (1986).Google Scholar
9. Monemar, B., Paskov, P. P., Bergman, J. P., Pozina, G., Paskova, T., Iwaya, M., Kamiyama, S., Amano, H. and Akasaki, I., Proc. of PLMCN-1, Rome, Italy, Sept. 26-29, 2001, Phys. Stat.Sol. (to be published).Google Scholar
10. Nardelli, M., Rapcewicz, K. and Bernholc, J., Appl Phys Lett 71, 3135 (1997).Google Scholar
11. Chichibu, F., Azuhata, T., Sota, T., Mukai, T. and Nakamura, S., Proc. of Int. Workshop on Nitride Semiconductors, Nagoya, Japan, Sept. 24-27, 2000, IPAP Conf Series 1, 528 (2000).Google Scholar