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Photoluminescence of Amorphous Hydrogenated Carbon Films, a-C:H

Published online by Cambridge University Press:  25 February 2011

V. A. Vassilyev
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
A. S. Volkov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
E. Musabekov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
E. I. Terukov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
V. E. Chelnokov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
S. V. Chernyshov
Affiliation:
A.F. Ioffe Physical-Technical Institute, Academy of Science of the USSR, 194021, Leningrad, USSR
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Abstract

Results are presented on the photoluminescence of plasma deposited amorphous carbon (a-C:H) films. Emission and exci tation spectra anti-Stokes emission, PL decay and fatigue, T-dependence of PL and photobleaching were mesuared. The data are discussed in terms of radiative recombination of the strongly localized electron-hole pairs.

As recently shown, in amorphous hydrogenated carbon films (a-C:H) powerful talls of localized states occur in the mobility gap that are due to a high degree of structural disorder [1] while a radiative recombination in this material is highly efficient [2, 3]. These properties, in our view, make a-C:H suitable for verification of models of recombination kinetics of photoexcited charge carriers in highly disordered systems with the use of photoluminescence (PL).

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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