Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T07:51:11.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence From Er− Implanted 4h And 6h-SiC

Published online by Cambridge University Press:  21 March 2011

Shin-ichiro Uekusa  and
Takayuki Goto
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electrical Engineering, Meiji University, 1-1-1, Higashi-mita, Tama-ku, Kawasaki-city, Kanagawa-ken, 214–8571, Japan
Takayuki Goto
Affiliation:
Department of Electrical and Electrical Engineering, Meiji University, 1-1-1, Higashi-mita, Tama-ku, Kawasaki-city, Kanagawa-ken, 214–8571, Japan
Get access

Abstract

Erbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC : Er were 1600 °C, PL intensity decreased at 1700 ° C, and the bandedge luminescence changed in relation to the luminescence of Er3+. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material. The Er3+ -PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (4I13/2) to the ground state (4I15/2) of Er3+.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.13.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[l] Uekusa, S., Ohshima, T., Majima, A., and Kumagai, M., “Optical activation of the Er3+ emissions from GaP coimplanted with nitrogen,” in Proc. 1994 Int. Workshop on Electroluminescence, Beijing, China, 1994, pp. 279∼283.Google Scholar
[2] Uekusa, S., Shimazu, K., Majima, A., and Yabuta, K., “Optical activation of Er3+ in silicon co-implanted with carbon,” Nucl. Instrum. Meth. B, vol.106, pp. 477–479, 1995.Google Scholar
[3] Majima, A.. Uekusa, S., Abe, K., and Kumagai, M., “1.54 μ m luminescence of Er−MeV implanted silicon, ”J. Lumin., vol.60/61, pp.595–598, 1994.Google Scholar
[4] Tang, Y. S.. Heasman, K. C., Gillin, W. P., and Sealy, B. J., “Characteristics of rare-earth element erbium implanted silicon, ” Appl. Phys. Lett., vol.55, pp.432–433, 1989.Google Scholar
[5] Shin, J. H., van den Hoven, G. N., and Polman, A., “Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon,” Appl. Phys. Lett., vol.67, pp.377–379, 1995.Google Scholar
[6] Przybylinska, H.. Hendorfer, G., Bruckner, M.. Palmetshofer, L., and Jantsch, W., “On the local structure of optically active Er centers in Si, ”Appl. Phys. Lett., vol.66, pp.490–492, 1995.Google Scholar
[7] Priolo, F., Ftanzo, C., Coffa, S., Polman, A.. Libertino, S., Barklie, R., and Carey, D., “The erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon,” J. Appl. Phys., vol.78, pp.3874–3882, 1995.Google Scholar
[8] Needles, M., Shluter, M., and Lannoo, M.. “Er point defect in silicon,” Phys. Rev., vol.B47, pp.15533–15536, 1993.Google Scholar
[9] Choyke, W. J., Devaty, R. P., Clemen, L. L., Yoganathan, M.. Pensl, G., and Hassler, C., “Intense erbium-1.54 μm photoluminescence from 2 to 525 K in ion-implanted 4H, 6H, 15R and 3C SiC,” Appl. Phys. Lett., vol.65, pp.1668–1670, 1994.Google Scholar
[10] Uekusa, S., Awahara, K., and Kumagaya, M., “Photoluminescence from Er-implanted polycrystalline 3C SiC,” IEEE Trans. Elect. Dev., vol.46, pp572–576, 1999.Google Scholar
[11] Babunts, R. A., Vetrov, V. A., Il'in, I. V., Mokhov, E. N., Romanov, N. G., Khramtsov, V. A., and Baranov, P. G., “Propertise of erbium luminescence in bulk crystals of silicon carbide” Physics of Solid State, vol.42, pp809–815.Google Scholar
[12] Goto, T., Uekusa, S., “Photoluminescence from Er-implanted 4H-SiC,” 48th Oyo Butsuri abstract book, pp1397 (28p-YK-2), 2001.Google Scholar
[13] Tako, T., and lkoma, T., et al., Oyo Butsuri data book, The Japan Society of AppliedPhysics, Ed., Maruzen, Japan. 1994, p.327.Google Scholar
[14] Uekusa, S.-I., Awahara, K., and Kumagai, M., “Luminescence properties of Er implanted polycrystalline 3C SiC,” Materials Science Forum, Silicon Carbide, III Nitrides and Related Materials, vols.264 • 268, pp.505–508, 1998.Google Scholar
[15] Hirabayashi, Y.. Furuya, M.. Hirai, K., Takano, H., Yabuta, K., and Kumagai, M., “Effect of isostatic press annealing for ion-implanted silicon carbide,” Materials Science Forum, III Nitrides and Related Materials, vols. 264–268, pp.749–752, 1998.Google Scholar
[16] Wilson, B. A., Yen, W. M., Hegarty, J., and Imbusch, G. F., “Luminescence from pure MnF2 and from MnF2 doped with Eu3+ and Er3+ ,” phys. Rev., vol.B19, pp.4238–4250, 1979.Google Scholar
[17] Massa, J. S., Buller, G. S., Walker, A.C., Smpson, J., Prior, K. A., and Cavenett, B. C.: Appl. Phys. Lett.67 (1995) 61.Google Scholar