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Photoluminescence Detection of Shallow Impurity Neutralization in Iii-V Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

Jörg Weber  and
Mandeep Singh
Jörg Weber
Affiliation:
Max-Planck-Institut f. Festörperforschung, 7000 Stuttgart 80, Federal Republic of Germany
Mandeep Singh
Affiliation:
Max-Planck-Institut f. Festörperforschung, 7000 Stuttgart 80, Federal Republic of Germany
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Abstract

We studied the low-temperature photoluminescence (PL) of several III–V compound semiconductors before and after hydrogen-plasma treatment. Drastic intensity changes of the bound exciton luminescence after hydrogen plasma treatments indicate a neutralization of impurities by the atomic hydrogen. In GaP, neutralization of the sulfur donor as well as the acceptors (C, Zn, Cd) is observed. The intense luminescence of the exciton bound to isoelectronic N in GaP is fully quenched by hydrogen plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 325
Copyright
Copyright © Materials Research Society 1988

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References

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