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Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing

Published online by Cambridge University Press:  21 March 2011

Vladimir P. Popov ,
Ida E. Tyschenko ,
Konstantin S. Zhuravlev  and
Ivan I. Morosov
Vladimir P. Popov
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
Ida E. Tyschenko
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
Konstantin S. Zhuravlev
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
Ivan I. Morosov
Affiliation:
Institute of Nuclear Physics, Novosibirsk, 630090, Russia
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Abstract

H+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G3.2
Copyright
Copyright © Materials Research Society 2001

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References

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