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Photoluminescence and Optical Characterization of a-SixN1-x:H based Multilayers Grown by PECVD

Published online by Cambridge University Press:  15 February 2011

F. Giorgis ,
F. Giuliani ,
C. F. Pirri ,
E. Tresso ,
R. Galloni ,
R. Rizzoli ,
C. Summonte ,
A. Desalvo ,
F. Zignani  and
P. Rava
...Show all authors
F. Giorgis
Affiliation:
Dip. Fisica ed Unità INFM Politecnico, C. so Duca degli Abruzzi 24, 10129 Torino, Italy
F. Giuliani
Affiliation:
Dip. Fisica ed Unità INFM Politecnico, C. so Duca degli Abruzzi 24, 10129 Torino, Italy
C. F. Pirri
Affiliation:
Dip. Fisica ed Unità INFM Politecnico, C. so Duca degli Abruzzi 24, 10129 Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica ed Unità INFM Politecnico, C. so Duca degli Abruzzi 24, 10129 Torino, Italy
R. Galloni
Affiliation:
Dip. Fisica ed Unità INFM Politecnico, C. so Duca degli Abruzzi 24, 10129 Torino, Italy
R. Rizzoli
Affiliation:
CNR-LAMEL, Via P. Gobetti 101, 40129 Bologna, Italy
C. Summonte
Affiliation:
CNR-LAMEL, Via P. Gobetti 101, 40129 Bologna, Italy
A. Desalvo
Affiliation:
Dip. Chim. Appl, e Sci. Mat. Univ. Bologna, viale Risorgimento 1, 40100 Bologna, Italy
F. Zignani
Affiliation:
Dip. Chim. Appl, e Sci. Mat. Univ. Bologna, viale Risorgimento 1, 40100 Bologna, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., Via Don Sapino 176, Savonera Torino, Italy
F. Cacca Vale
Affiliation:
Dip. Fisica Università di Padova, Via Marzolo 8, 35131 Padova, Italy
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Abstract

High room temperature photoluminescence efficiency (PLE) was observed for the first time in a-SixN1-x:H based nanometric multilayers deposited by plasma enhanced chemical vapour deposition (PECVD). The structure consists of alternate stoichiometric a-Si3N4:H barrier layers (E04=5.0 eV) and well layers in which E04 is varied between 2.11 eV and 2.64 eV. The peak of PL spectra and the absorption coefficient edge exhibits a blue shift up to 0.5–0.6 eV by decreasing the well thickness from 30 Å down to 5–10 Å. A strong increase in the PLE of multilayers, with well thickness around 5–10 Å, with respect to the PLE of bulk material was obtained.

A p-i-n light emitting device (LED) with a multilayered structure as i-layer, having well layers with E04=2.64 eV and thickness 10 Å, is presented. The LED under forward bias shows an emission visible with the naked eye, with limited degradation after 8 hours of continuous operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 489
Copyright
Copyright © Materials Research Society 1997

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References

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