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Photoluminescence and Bandgap Narrowing in Heavily Doped n-GaAs

Published online by Cambridge University Press:  25 February 2011

H.D. Yao  and
A. Compaan
H.D. Yao
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
A. Compaan
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606
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Abstract

Extremely heavily doped n-GaAs was produced by pulsed-laser annealing of Si implanted GaAs, achieving carrier concentrations exceeding 3.2×1019/cm3. Our photoluminescence (PL) spectra indicate a bandgap narrowing due to heavy n-type doping with a functional form of Δεg(eV) = - 6.3 × 10cm-8[(cm-2)]1/3 . At the highest carrier concentration, the bandgap shrinkage reaches -200 meV and the electron Fermi energy is -410 meV. These large values indicate that there exists a considerable conduction band “stretch” between the Γ and L-valley of GaAs for very high n-type concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 759
Copyright
Copyright © Materials Research Society 1990

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