Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-05T20:32:48.553Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoinduced Space Charge Effects in a-Si:H Solar Cells

Published online by Cambridge University Press:  15 February 2011

T. Unold ,
T. Binnewies ,
R. Brüggemann  and
G.H. Bauer
T. Unold
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, Germany
T. Binnewies
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, Germany
R. Brüggemann
Affiliation:
Laboratoire de Genie Electrique, Supelec, 91192 Gif-sur-Yvette Cedex, France
G.H. Bauer
Affiliation:
Fachbereich Physik, Universität Oldenburg, 26111 Oldenburg, Germany
Get access

Abstract

We have investigated charge collection in thin amorphous silicon solar cells under light bias illumination, both experimentally and by numerical simulation. In such charge collection experiments, space charge due to trapped bias-light generated carriers leads to an enhancement of a small signal probe beam charge collection. It is found that this enhancement of the small signal charge collection is strongly dependent on the diode thickness and the defect density in the samples. In particular for thin diodes (d < 0.5 microns) the charge collection enhancement can be shown to increase with light-induced degradation of the devices. The effect of these material parameters as well as other experimental parameters, such as light bias and probe beam photon flux, will be demonstrated by means of numerical simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 875
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hou, J. Y. and Fonash, S. J., Applied Physics Letters 61, p. 186 (1992).Google Scholar
2. Fonash, S. J., Hou, J., Rubinelli, F. A., et al., Optical Engineering 33, p. 2065 (1994).Google Scholar
3. Zollondz, J.-H., Bruggemann, R., Gao, W., et al., in Mat. Res. Soc. Symp. Proc, 420, p. 697, (1996).Google Scholar
4. Chatterjee, P., Journal of Applied Physics 75, p.1093 (1994).Google Scholar
5. Gao, W., Main, C., Reynolds, S., et al., J. of Non-Cryst. Solids 198–200, p. 1221(1996).Google Scholar