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Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride

Published online by Cambridge University Press:  25 February 2011

Mitsugu Hanabusa ,
Hideki Ouchi ,
Kenji Ishida ,
Masahiro Kawasaki  and
Satoshi Shogen
Mitsugu Hanabusa
Affiliation:
Toyohashi University of Technology, Tenpaku. Toyohashi 441, Japan
Hideki Ouchi
Affiliation:
Toyohashi University of Technology, Tenpaku. Toyohashi 441, Japan
Kenji Ishida
Affiliation:
Toyohashi University of Technology, Tenpaku. Toyohashi 441, Japan
Masahiro Kawasaki
Affiliation:
Institute for Electronics Science, Hokkaido University, Sapporo 060., Japan
Satoshi Shogen
Affiliation:
Institute for Electronics Science, Hokkaido University, Sapporo 060., Japan
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Abstract

Aluminum thin film was deposited via a photochemical surface reaction of dimethylaluminum hydride (DMAH) using a deuterium lamp. The period required to initiate the film growth differed with substrate, and making use of this result the film could be grown preferentially on silicon nitride and silicon oxide layers rather than on wet-etched silicon. On the basis of an x-ray photoelectron spectroscopy the observed dependence of photodeposition on substrate surfaces can be attributed to how DMAH is chemisorbed initially.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 85
Copyright
Copyright © Materials Research Society 1992

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References

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