Skip to main content Accessibility help
×
Home

Photoinduced Noise in Amorphous Semiconductor Films

  • F. Demichelis (a1), C.F. Pirri (a1) and A. Tagliaferro (a1)

Abstract

Electrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconductive undoped a-Si:H and a-SiC:H (deposited by glow discharge) in the frequency range .1 – 20 kHz are obtained at room temperature. The analysis is performed upon metal/semiconductor/ITO Schottky barriers. The PSDs vs frequency follow l/fn law and show a change of magnitude when the wavelength of the incident light is varied around the value corresponding to the energy gap.

Copyright

References

Hide All
Carbone, A., Demichelis, F. and Mazzetti, P., Mat. Res. Soc. Symp. Proc. vol.152, p.163 (1989).
2. Carbone, A., Demichelis, F. and Mazzetti, P., Proc. of “Noise in Physical System”, Budapest 1989.
3. Anderson, J.C., Phil. Mag. B 48, 31 (1983).
4. D’Amico, A., Fortunato, G. and VanVliet, CM., Journ. of Non-Cryst. Sol. 77/78, 499 (1985).
5. Bathaei, F.Z. and Anderson, J.C., Phil. Mag. B 55, 87 (1987).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed