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Photoinduced Noise in Amorphous Semiconductor Films

Published online by Cambridge University Press:  25 February 2011

F. Demichelis ,
C.F. Pirri  and
A. Tagliaferro
F. Demichelis
Affiliation:
Dipartimento di Fisica - Politecnico - Torino
C.F. Pirri
Affiliation:
Dipartimento di Fisica - Politecnico - Torino
A. Tagliaferro
Affiliation:
Dipartimento di Fisica - Politecnico - Torino
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Abstract

Electrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconductive undoped a-Si:H and a-SiC:H (deposited by glow discharge) in the frequency range .1 – 20 kHz are obtained at room temperature. The analysis is performed upon metal/semiconductor/ITO Schottky barriers. The PSDs vs frequency follow l/fn law and show a change of magnitude when the wavelength of the incident light is varied around the value corresponding to the energy gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 341
Copyright
Copyright © Materials Research Society 1990

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References

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