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Photogenerated Carrier Confinement During the Laser-Controlled Aqueous Etching of GaAs/AlGaAs Nultilayers

Published online by Cambridge University Press:  25 February 2011

M.N. Ruberto ,
A.E. Willner ,
D.V. Podlesnik  and
R.M. Osgood Jr.
M.N. Ruberto
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
A.E. Willner
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
D.V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories and the Center for Telecommunications Research, Columbia University, New York, NY 10027
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Abstract

The sensitivity of the laser-controlled aqueous etching to the optical and electrical properties of semiconductors was utilized during the etching of n-GaAs/n-AlGaAs multilayers to produce novel microstructures. Since this process is controlled by the transport of photogenerated holes to the semiconductor/solution interface, we found that the morphology of etched features is dependent on the bandgap and hole diffusion length of each layer within the heterostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 279
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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