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Photo-EPR and Spatially Resolved EPR of ASGa in As-Grown GaAs

Published online by Cambridge University Press:  28 February 2011

M. Baeumler ,
U. Kaufmann  and
J. Windscheif
M. Baeumler
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, D-7800 Freiburg, Eckerstraße 4, Federal Republic of Germany
U. Kaufmann
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, D-7800 Freiburg, Eckerstraße 4, Federal Republic of Germany
J. Windscheif
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, D-7800 Freiburg, Eckerstraße 4, Federal Republic of Germany
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Abstract

The photo-response of the ASGa+ antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown GaAs as a function of illumination time and photon energy. The results establish a firm and positive correlation between ASGa and the deep donor level EL2. Spatially resolved EPR measurements show that the ASGa concentration can fluctuate by about a factor of two across a 2-inch semiinsulating GaAs wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 201
Copyright
Copyright © Materials Research Society 1985

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