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Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation

Published online by Cambridge University Press:  22 February 2011

W. G. Petro ,
T. Kendelewicz ,
I. A. Babalola ,
I. Lindau  and
W. E. Spicer
W. G. Petro
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
T. Kendelewicz
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
I. A. Babalola
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
I. Lindau
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
W. E. Spicer
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
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Abstract

Room-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 329
Copyright
Copyright © Materials Research Society 1984

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References

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