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Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1

  • P. Stradins (a1), H. Fritzsche (a1), N. Kopidakis (a2) and P. Tzanetakis (a2)

Abstract

The steady state photoconductivity up of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

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Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1

  • P. Stradins (a1), H. Fritzsche (a1), N. Kopidakis (a2) and P. Tzanetakis (a2)

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