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Photoacoustic Study of The Effect of 0.9 eV Light Illumination in Semi-Insulating GaAs

Published online by Cambridge University Press:  10 February 2011

Atsuhiko Fukuyama ,
Yoshito Akashi ,
Kenji Yoshino ,
Kouji Maeda  and
Tetsuo Ikari
Atsuhiko Fukuyama
Affiliation:
Department of Materials Science, Miyazaki University and Miyazaki University 1-1 Gakuen kibanadai-nishi, Miyazaki 889-21, Japan
Yoshito Akashi
Affiliation:
Department of Materials Science, Miyazaki University and Miyazaki University 1-1 Gakuen kibanadai-nishi, Miyazaki 889-21, Japan
Kenji Yoshino
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University 1-1 Gakuen kibanadai-nishi, Miyazaki 889-21, Japan
Kouji Maeda
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University 1-1 Gakuen kibanadai-nishi, Miyazaki 889-21, Japan
Tetsuo Ikari
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University 1-1 Gakuen kibanadai-nishi, Miyazaki 889-21, Japan
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Abstract

The effect of the secondary light illumination of hv = 0.9 eV on the photoquenched and the enhanced states in semi-insulating GaAs are investigated by using piezoelectric photoacoustic (PPA) measurements at 80 K. It is found that the secondary light causes an optical recovery from EL2* to EL2° and this is in agrezment with the result reported by using infrared optical absorption measurements. We observed a broad peak around 0.9 eV after the secondary light illumination for the first time. The most important finding is that the PPA spectra after the secondary light illumination on the quenched and the enhanced states are the same in the whole photon energy region. We concluded that the secondary light of hv = 0.9 eV induces both an optical recovery and generation of metastable state of the EL6 level. The difference of the transformation rates of these two processes explains well the observed complex natures of the PPA signal under the secondary light illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 601
Copyright
Copyright © Materials Research Society 1998

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References

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