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Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

  • I. N. Yassievich (a1), O. B. Gusev (a1), M. S. Bresler (a1), W. Fuhs (a2), A. N. Kuznetsov (a1), V. F. Masterov (a3), E. I. Terukov (a1) and B. P. Zakharchenya (a1)...

Abstract

Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.

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Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

  • I. N. Yassievich (a1), O. B. Gusev (a1), M. S. Bresler (a1), W. Fuhs (a2), A. N. Kuznetsov (a1), V. F. Masterov (a3), E. I. Terukov (a1) and B. P. Zakharchenya (a1)...

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