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Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

Published online by Cambridge University Press:  25 February 2011

A. Slaoui ,
M. Elliq ,
H. Pattyn ,
E. Fogarassy ,
S. De Unamuno  and
R. Stuck
A. Slaoui
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
M. Elliq
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
H. Pattyn
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
E. Fogarassy
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
S. De Unamuno
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
R. Stuck
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), CRN, 23 Rue du Lœss, F-67037 Strasbourg France, 2IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
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Abstract

This work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 389
Copyright
Copyright © Materials Research Society 1992

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