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Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations

Published online by Cambridge University Press:  26 February 2011

R. Gafiteanu ,
U. Gösele  and
T. Y. Tan
R. Gafiteanu
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
U. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
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Abstract

Using the diffusion-segregation equation, modeling and simulations of gettering Au (a substi-tutional-interstitial species in Si) away from the Si bulk have been performed. Three external gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 297
Copyright
Copyright © Materials Research Society 1995

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