We have examined segregation behavior of various alloying elements at lamellar interfaces of C40-NbSi2/C11b-MoSi2 duplex silicide by a phase-field simulation, which takes into account not only bulk chemical free energy but also segregation energy evaluated by the first principles calculation to reflect interaction between solutes and interface. The simulation suggests that segregation behaviors greatly depend on additive elements. In the case of Cr-addition, the C40-phase becomes enriched with Nb and Cr, while the C11b-phase becomes enriched with Mo, which agrees with the equilibrium phase diagram. Slight segregation of Cr atoms is observed at the interface, whereas Nb and Mo concentrations monotonically change across the diffuse interface between C11b and C40 phases. Significant segregations of Zr and Hf are formed at static interfaces, which are attributed to the chemical interaction between solute atoms and the static interface.