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Phase Stability of Molybdenum-Silicon Nitride-Silicon Mis Schottky Diode at High Temperatures

Published online by Cambridge University Press:  25 February 2011

Heungsoo Park  and
C.R. Helms
Heungsoo Park
Affiliation:
Stanford Electronics Laboratory, Stanford University Stanford, CA 94305
C.R. Helms
Affiliation:
Stanford Electronics Laboratory, Stanford University Stanford, CA 94305
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Abstract

Previously our group[1,2] has demonstrated metal-thin insulator- silicon Schottky diode structures which allow the Si Schottky barrier height to be adjusted over nearly the full range of the silicon band gap by appropriate choice of insulator thickness and metal. However, previous attempts to achieve a structure with a high barrier height to p-type that is stable above 400C(using primarily Titanium) have failed. In this paper we report on results for a metal, Molybdenum, which has a stable tie line to Sio2 and Si3N4 in metal-silicon-oxygen(nitrogen) ternary phase diagram which leads to a more stable system.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 521
Copyright
Copyright © Materials Research Society 1990

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References

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