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Phase Composition and Microstructure as a Function of Deposition Conditions for Potassium Tantalate Niobate Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 January 1992

C.M. Cotell  and
R.E. Leuchtner
C.M. Cotell
Affiliation:
Surface Modification Branch, Naval Research Laboratory, Washington, D.C. 20375
R.E. Leuchtner
Affiliation:
ONT/NRL Post-Doctoral Research Associate; present address: Department of Physics, University of New Hampshire, Durham, NH 03824
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Abstract

Potassium tantalate niobate [K(Ta1−xNbx)O3 or KTNJ films were deposited by pulsed laser deposition (PLD) on (100)MgO substrates from targets of KTN with x=0.45. The effects of substrate temperature (300–700°C) and ambient oxygen pressure (50 and 300 mTorr) on the characteristics of films were investigated. At 500°C and 300 mTorr, films were amorphous with a few isolated, randomly-oriented crystalline grains of perovskite and pyrochlore. At 600°C and 300 mTorr, the films comprised a columnar microstructure consisting of a mixture of amorphous phase with (100) perovskite. At 650°C, films were almost entirely (100) perovskite. At 700°C, the films were predominantly (100) perovskite, but contained a much higher fraction of pyrochlore. At 50 mTorr, pyrochlore was found in significant fractions up to 650°C. At 700°C, films were predominantly (100) perovskite. Rutherford Backscattering analysis of the chemical composition showed that all the films were potassium-deficient and the tantalum to niobimn ratio exceeded that found in the targets for all deposition conditions. There appeared to be a relationship between oxygen pressure during deposition and the amount of potassium retained in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 367
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. J, H.. Scheel and Gunter, P., in Crystal Growth of Electronic Materials, edited by Kaldis, E. (Elsevier Science Publishers, Amsterdam, 1985) p. 149.Google Scholar
2. Bohac, P. and Kaufmann, H., Electron. Lett. 21, 960 (1985).Google Scholar
3. Hulliger, J., Gutmann, R., and Wagli, P., Thin Solid Films, 175, 206 (1989).Google Scholar
4. Yilmaz, S., Venkatesan, T., and Gerhard-Multhaupt, R., Appl. Phys. Lett. 58, 2479 (1991).Google Scholar
5. Horwitz, J.S., Grabowski, K.S., Chrisey, D.B., and Leuchtner, R.E., Appi. Phys. Lett., 59 1565 (1991).Google Scholar
6. Nazeri, A. and Kahn, M., J. Am. Cer. Soc., 75, 2125 (1992).Google Scholar
7. Leuchtner, R. E., Grabowski, K. S., Chrisey, D.B., and Horwitz, J.S., Appl. Phys. Lett, 60, 1193 (1992).Google Scholar