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Persistent Electronic Conduction in 12CaO7Al2O3 Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

Published online by Cambridge University Press:  17 March 2011

Masashi Miyakawa ,
Katsuro Hayashi ,
Yoshitake Toda ,
Toshio Kamiya ,
Masahiro Hirano  and
Hideo Hosono
Masashi Miyakawa
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Katsuro Hayashi
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Yoshitake Toda
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Toshio Kamiya
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Masahiro Hirano
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Hideo Hosono
Affiliation:
Hosono Transparent Electro-Active Materials Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

A new method to convert 12CaO7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar+ ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm−2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×1021 cm−3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm−1. On the other hand, fluences less than 1×1017 cm−2 kept the films transparent and insulating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E2.7
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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